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Department of Earth & Space Sciences
Space Science Center, Room 101
235 Martindale Drive
Morehead, KY 40351
Phone: 606-783-2381
Fax: 606-783-5040

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MSU Home :: Xu, Qingzhou
Qingzhou Xu
Dr. Qingzhou Xu

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Xu, Qingzhou, Micro-Fabrication Engineer / Instructor of Space Science
Program/Dept: Earth and Space Science
Degrees, Licensures and Certifications: PhD., Materials Science and Engineering, University of California, Irvine, CA; M.S., Materials Science and Engineering, Beijing Univeristy of Science and Technology, China; B.S., Materials Science and Engineering, Harbin Institute of Technology, China.
Contact Info:
Space Science Center 212F
Phone: 606.783.9598


Dr. Xu received a bachelor's degree in materials science and engineering from Harbin Institute of Technology in China in 1989. He earned a master's degree in materials science and engineering from Beijing University of Science and Technology in 1992, and his Ph.D.  in materials science and engineering from the University of California, Irvine  in 2000. He has worked as an engineer in the Chinese Academy of Science Mechanics Institute in Beijing, China and the Chinese National Engineering Center of Composites, both in Beijing, China and the RF Integrated Corporation in California. His early study and work experience includes structural materials (light alloys and refractory metals), engineering functional materials (hard/soft magnetic materials, hydrogen-storage materials for rechargeable battery and non-lead soldering materials) and thin films. His recent study and work experience are mainly on semiconductor materials and processing, III-V compound device passivation, high-speed transistor (HBTs and HEMTs) processing and characterization, micro-electro-mechanical systems (MEMS), magnetostatic actuators and electrostatic switches, nanolithography and nano-devices. His current interests focus on using materials science knowledge to solve the reliability issues in the areas of RF MEMS switches (thin-film stress control, reliable switch contacts and novel switch architecture with enhanced reliability) and III-V compound transistors (high-performance ohmic contacts and device passivation) as well as developing novel nano-layered and nanostructured materials. He has first authored more than 20 journal and conference papers.

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